| 1 | M0S2 dual-gate transistors with electrostatically doped contacts显示文摘Two-dimensional(2D)transition metal dichalcogenides(TMDs)such as molybdenum disulfide(M0S2)have been intensively investigated because of their exclusive physical properties for advaneed electronics and optoelectronics.In the present work,we study the M0S2 transistor based on a novel tri-gate device architecture,with dual-gate(Dual-G)in the channel and the buried side-gate(Side-G)for the source/drain regi ons.All gates can be in depe ndently con trolled without in terfere nee.For a MoS2 sheet with a thick ness of 3.6 nm,the Schottky barrier(SB)and non-overlapped channel region can be effectively tuned by electrostatically doping the source/drain regions with Side-G.Thus,the extri nsic resista nee can be effectively lowered,and a boost of the ON-state cur re nt can be achieved.Mean while,the cha nn el c ontrol remai ns efficient under the Dual-G mode,with an ON-OFF current ratio of 3 x 107 and subthreshold swing of 83 mV/decade.The corresponding band diagram is also discussed to illustrate the device operati on mechanism.This no vel device structure ope ns up a new way toward fabricati on of high-performance devices based on 2D-TMDs. | Fuyou Liao Yaocheng Sheng Zhongxun Guo Hongwei Tang Yin Wang Lingyi Zong Xinyu Chen Antoine Riaud Jiahe Zhu Yufeng Xie Lin Chen Hao Zhu Qingqing Sun Peng Zhou Xiangwei Jiang Jing Wan Wenzhong Bao David Wei Zhang | 2019 | Nano Research2019，12，10： | 2 |
| 2 | Microstructural Instability of an Experimental Nickel-Based Single-Crystal Superalloy显示文摘Microstructural instability with the precipitation of topologically close-packed(TCP)phases of an experimental nickel-based single-crystal superalloy has been investigated.A significant amount of σ phases are distinguished in the interdendritic region of the as-cast samples after thermal exposure at 900℃ for 1000 h.Theσphases are preferentially precipitated at the periphery of coarse γ/γ′eutectic,and their morphological evolution from needles to granules is observed.Microstructural analysis suggests that the local segregation of Cr and Ti at the periphery of coarse γ/γ′eutectic accounts for the formation ofσphases in the as-cast samples.After heat treatment with low solution temperature and short holding time,the dendritic segregation of alloying elements(i.e.,W,Re,Ti and Ta)and the volume fraction of γ′phase in the interdendritic region are similar to that of the as-cast samples.However,no TCP phases are present in the interdendritic region of the heat-treated samples after thermal exposure,which is primarily ascribed to the elimination of local segregation of Cr and Ti near the coarse γ/γ′eutectic.Moreover,small quantities ofμphases are precipitated in the secondary dendrite arm near the interdendritic region after thermal exposure,due to the increased volume fraction ofγ′phase and the concomitant enrichment of W and Re in theγmatrix. | Bin Yin Guang Xie Xiangwei Jiang Shaohua Zhang Wei Zheng Langhong Lou | 2020 | Acta Metallurgica Sinica(English Letters)2020，33，10： | 1 |
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