维普期刊资源整合服务平台（V6.5）

29篇 您的检索式：作者名="Emtsev"

选中清除导出查看参考文献查看引证文献引用追踪共2页首页上一页第1页下一页末页 /2 跳转

	题名	作者	年代	出处	被引量
1	Interaction,growth,and ordering of epitaxial graphene on SiC{0001}surfaces:a comparative photoelectron spectroscopy study显示文摘	EMTSEV K V SPECK F SEYLLER T H	2008	Phys Rev:B2008，77，15：	1
2	Epitaxial graphene:a new material显示文摘	Seyller T Bostwick A Emtsev K V	2008	Phys Star Sol (b)2008，245，7：	1
3	Towards wafer-size graphene layers by atmospheric pressure graphitization of SiC (0001) 显示文摘	EMTSEV K BOSTWICK A HORN K	2009	Nature Materials2009，8，：	1
4	Acceptor States in the Photolumineseenee Spectra of n-InN 显示文摘	Klochikhin A A Davydov V Y Emtsev A V	2005	Phys RevB2005，71，19：	1
5	Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide 显示文摘	EMTSEV K V BOSTWICK A HORN K	2009	Nature materials2009，8，3：	1
6	Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide显示文摘	Emtsev K V Bostwick A Horn K et at	2009	Nature Materials2009，8，：	1
7	Towards wafer-size graphene layers by atmospheric pressure graphi- tization of silicon carbide 显示文摘	EMTSEV K V BOSTWICK A HORN K	2009	Nature Materials2009，8，3：	1
8	Towards wafer - size graphene layers by atmospheric pressure graphitiza- tion of silicon carbide 显示文摘	Emtsev K Bostwick A Horn K	2009	Nat Mater2009，8，3：	1
9	Towards wa-fer-size graphene layers by atmospheric pressure graphiti za silicon carbide显示文摘	Emtsev K V Bostwick A Horn K	2009	Nature Materials2009，8，：	1
10	Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide显示文摘	Emtsev K V Bostwick A Horn K		0，，03：	1
11	Radiation-produced Defects in N-GaN显示文摘	Emtsev V V Davydov V Y Kozlovskii V V	2007	Physica B2007，，：	1
12	Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide显示文摘	Emtsev K V Bostwick A Horn K	2009	Nature Materials2009，8，：	1
13	Acceptor states in the photolumineseence spectra of n-InN显示文摘	Klochikhin A A Davydov V Y Emtsev V V	2005	PhysRev B2005，，：	1
14	Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide 显示文摘	Emtsev K V Bostwick A Horn K	2009	Nature Materials2009，8，3：	1
15	Friction and dissipation in epitaxial graphene films显示文摘	Filleter T Mcchesney J Bostwick A Rotenberg E Emtsev K Seyller T Horn K Bennewitz R	2009	Physi- cal Review Letters2009，102，08：	1
16	Effect of annealing on defects in as-grown and γ-ray irradiated n- GaN layers 显示文摘	SHMIDT N M DAVYDOV D V EMTSEV V V	1999	Phys Stat Sol (b)1999，216，：	1
17	Towards wafer - size graphene layers by atmospheric pressure graphitization of silicon carbide显示文摘	Emtsev K V Bostwick A Horn K	2009	Nat Mater2009，8，：	1
18	Structural and electronic properties of graphite layers grown on SiC (0001)显示文摘	Seyller T Emtsev K Gao K	2006	Surf Sci2006，600，18：	1
19	An infrared investigation of the 887 cm ?1 band in Cz–Si显示文摘	L.G. Fytros G.J. Georgiou C.A. Londos V.V. Emtsev	1999	Physica B: Physics of Condensed Matter1999，，：	1
20	Epitaxial graphene:a new material显示文摘	Seyller T Boelwiek A Emtsev K V	2008	Plays Stat Sol (b)2008，245，：	1

返回顶部每页显示：

共2页首页上一页第1页下一页末页 /2 跳转

互联网出版许可证新出网证(渝)字10号全国400电话 - 免长途话费

用户提示