| 2 | Water-assisted self-sustained burning of metallic single-walled carbon nanotubes for scalable transistor fabrication显示文摘Although aligned arrays of semiconducting single-walled carbon nanotubes(s-SWNTs) are promising for use in next-generation electronics owing to theirultrathin bodies and ideal electrical properties, even a small portion of metallic(m-) counterparts causes excessive leakage in field-effect transistors (FETs).To fully exploit the benefits of s-SWNTs for use in large-scale systems, it isnecessary to completely eliminate m-SWNTs from as-grown SWNT arrays andthereby obtain purely semiconducting large-area arrays, wherein numerousFETs can be flexibly built. In this study, we performed electrical burning ofm-SWNTs assisted by water vapor and polymer coating to eliminate m-SWNTsover a long length for the scalable fabrication of transistors from the remainings-SWNT arrays. During the electrical-breakdown process, the combination ofwater vapor and the polymer coating significantly enhanced the burning ofthe SWNTs, resulting in a self-sustained reaction along the nanotube axis. Wefound that m-SWNT segments partially remaining on the anode side resultedfrom one-way burning from the initial breakdown position, where Joule-heating-induced oxidation first occurred. The s-SWNT-enriched arrays obtained wereused to fabricate multiple FETs with a high on-off current ratio. The resultsindicate the advantages of this approach over conventional electrical breakdownfor the large-scale purification of s-SWNTs. | Keigo Otsuka Taiki Inoue Yuki Shimomura Shohei Chiashi Shigeo Maruyama | 2017 | Nano Research2017，10，9： | 2 |
| 3 | Investigation of charge interaction between fullerene derivatives and single-walled carbon nanotubes显示文摘The charge interaction and corresponding doping effect between single-walled carbonnanotubes (SWNTs) and various fullerene derivatives, namely, C60, phenyl-C61-butyricacid methyl ester (PC61BM), methano-indenefullerene (MIF), 10,100,40,400-tetrahydrodi[1,4]methanonaphthaleno[5,6]fullerene (ICBA), 1,4-bis(dimethylphenylsilylmethyl)[60]fullerene (SIMEF-1), and dimethyl(orthoanisyl) silylmethyl(dimethylphenylsilylmethyl)[60]fullerene (SIMEF-2), are investigated. A variety of analytical techniques,including field-effect transistors (FETs) made of horizontally aligned arrays ofSWNTs, is used as a means of investigation. Data from different measurements haveto be used to obtain a concrete evaluation for the fullerene-applied SWNTs. The datacollectively points toward the conclusion that fullerenes with high molecular orbitalenergy levels, namely, MIF, SIMEF-1, SIMEF-2, and PC61BM, induce p-type doping,while fullerenes with low molecular orbital energy levels, namely, ICBA and C60,induce n-type doping on the carbon nanotubes. Nevertheless, the SWNTs retained ptypecharacteristics because n-doping induced by the fullerenes are weak compared tothe p-doping of the water and oxygen on carbon nanotubes. This means that fullerenederivatives have the ability to fine-tune the energy levels of carbon nanotubes, whichcan play a crucial role in carbon nanotube-based electronics, such as solar cells, lightemittingdevices, and FETs. | Clément Delacou Il Jeon Keigo Otsuka Taiki Inoue Anton Anisimov Takenori Fujii Esko I.Kauppinen Shigeo Maruyama Yutaka Matsuo | 2019 | InfoMat2019，1，4： | 1 |
| 4 | Coaxial boron nitride nanotubes as interfacial dielectric layers to lower interface trap density in carbon nanotube transistors显示文摘A semiconductor/dielectric interface is one of the dominant factors in device characteristics,and a variety of oxides with high dielectric constants and low interface trap densities have been used in carbon nanotube transistors.Given the crystal structure of nanotubes with no dangling bonds,there remains room to investigate unconventional dielectric materials.Here,we fabricate carbon nanotube transistors with boron nitride nanotubes as interfacial layers between channels and gate dielectrics,where a single semiconducting nanotube is used to focus on switching behaviors at the subthreshold regime.The subthreshold swing of 68 mV·dec^(−1)is obtained despite a 100-nm-thick Sio_(2)dielectric,corresponding to the effective interface trap density of 5.2×10^(11)cm^(−2)·eV^(−1),one order of magnitude lower than those of carbon nanotube devices without boron nitride passivation.The interfacial layers also result in the mild suppression of threshold voltage variation and hysteresis.We achieve Ohmic contacts through the selective etching of boron nitride nanotubes with XeF2 gas,overcoming the trade-off imposed by wrapping the inner nanotubes.Negligible impacts of fluorinating carbon nanotubes on device performances are also confirmed as long as the etching is applied exclusively at source/drain regions.Our results represent an important step toward nanoelectronics that exploit the advantage of one-dimensional van der Waals heterostructures. | Keigo Otsuka Taiki Sugihara Taiki Inoue Weijie Jia Satoru Matsushita Takanobu Saito Minhyeok Lee Takashi Taniguchi Kenji Watanabe Gregory Pitner Ming-Yang Li Tzu-Ang Chao Rong Xiang Shohei Chiashi Shigeo Maruyama | 2023 | Nano Research2023，16，11： | 0 |
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