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| 1 | Interlayer exciton formation,relaxation,and transport in TMD van der Waals heterostructures显示文摘Van der Waals(vdW)heterostructures based on transition metal dichalcogenides(TMDs)generally possess a type-II band alignment that facilitates the formation of interlayer excitons between constituent monolayers.Manipulation of the interlayer excitons in TMD vdW heterostructures holds great promise for the development of excitonic integrated circuits that serve as the counterpart of electronic integrated circuits,which allows the photons and excitons to transform into each other and thus bridges optical communication and signal processing at the integrated circuit.As a consequence,numerous studies have been carried out to obtain deep insight into the physical properties of interlayer excitons,including revealing their ultrafast formation,long population recombination lifetimes,and intriguing spin-valley dynamics.These outstanding properties ensure interlayer excitons with good transport characteristics,and may pave the way for their potential applications in efficient excitonic devices based on TMD vdW heterostructures.At present,a systematic and comprehensive overview of interlayer exciton formation,relaxation,transport,and potential applications is still lacking.In this review,we give a comprehensive description and discussion of these frontier topics for interlayer excitons in TMD vdW heterostructures to provide valuable guidance for researchers in this field. | Ying Jiang Shula Chen Weihao Zheng Biyuan Zheng Anlian Pan | 2021 | Light(Science & Applications)2021，10，5： | 4 |
| 2 | Differential alkaline phosphatase responses of rat and human bone marrow derived mesenchymal stem cells to 45S5 bioactive glass显示文摘 | Gwendolen C. Reilly Shula Radin Andrew T. Chen Paul Ducheyne | 2007 | Biomaterials2007，，28： | 1 |
| 3 | Two-dimensional optoelectronic devices for silicon photonic integration显示文摘With the unprecedented increasing demand for extremely fast processing speed and huge data capacity,traditional silicon-based information technology is becoming saturated due to the encountered bottle-necks of Moore's Law.New material systems and new device architectures are considered promising strategies for this challenge.Two-dimensional(2D)materials are layered materials and garnered persistent attention in recent years owing to their advantages in ultrathin body,strong light-matter interaction,flexible integration,and ultrabroad operation wavelength range.To this end,the integra-tion of 2D materials into silicon-based platforms opens a new path for silicon photonic integration.In this work,a comprehensive review is given of the recent signs of progress related to 2D material inte-grated optoelectronic devices and their potential applications in silicon photonics.Firstly,the basic op-tical properties of 2D materials and heterostructures are summarized in the first part.Then,the state-of-the-art three typical 2D optoelectronic devices for silicon photonic applications are reviewed in detail.Finally,the perspective and challenges for the aim of 3D monolithic heterogeneous integration of these 2D optoelectronic devices are discussed. | Zilan Tang Shula Chen Dong Li Xiaoxia Wang Anlian Pan | 2023 | Journal of Materiomics2023，9，3： | 1 |
| 4 | Van der Waals epitaxial growth and optoelectronics of a vertical MoS_(2)/WSe_(2)p-n junction显示文摘Two-dimensional(2D)transition metal dichalcogenides(TMDs)have attracted extensive attention due to their unique electronic and optical properties.In particular,TMDs can be fexibly combined to form diverse vertical van der Waals(vdWs)heterostructures without the limitation of lattice matching,which creates vast opportunities for fundamental investigation of novel optoelectronic applications.Here,we report an atomically thin vertical p-n junction WSe_(2)/MoS_(2)produced by a chemical vapor deposition method.Transmission electron microscopy and steady-state photoluminescence experiments reveal its high quality and excellent optical properties.Back gate feld efect transistor(FET)constructed using this p-n junction exhibits bipolar behaviors and a mobility of 9 cm^(2)/(V·s).In addition,the photodetector based on MoS_(2)/WSe_(2)heterostructures displays outstanding optoelectronic properties(R=8 A/W,D^(*)=2.93×10^(11)Jones,on/of ratio of 10^(4)),which benefted from the built-in electric feld across the interface.The direct growth of TMDs p-n vertical heterostructures may ofer a novel platform for future optoelectronic applications. | Yu Xiao Junyu Qu Ziyu Luo Ying Chen Xin Yang Danliang Zhang Honglai Li Biyuan Zheng Jiali Yi Rong Wu Wenxia You Bo Liu Shula Chen Anlian Pan | 2022 | Frontiers of Optoelectronics2022，15，4： | 0 |
| 5 | Evidence for moiréintralayer excitons in twisted WSe_(2)/WSe_(2) homobi layer superlattices显示文摘Recent advances in twisted van der Waals heterostructure superlattices have emerged as a powerful and attractive platform for exploring novel condensed matter physics due to the interplay between the moirépotential and Coulomb interactions.The moirésuperlattices act as a periodic confinement potential in space to capture interlayer excitons(IXs),resulting in moiréexciton arrays,which provide opportunities for quantum emitters and many-body physics.The observation of moiréIXs in twisted transition-metal dichalcogenide(TMD)heterostructures has recently been widely reported.However,the capture and study of the moiréintralayer excitons based on TMD twisted homobilayer(T-HB)remain elusive.Here,we report the observation of moiréintralayer excitons in a WSe_(2)/WSe_(2) T-HB with a small twist angle by measuring PL spectrum.The multiple split peaks with an energy range of 1.55-1.73 eV are different from that of the monolayer WSe_(2) exciton peaks.The split peaks were caused by the trapping of intralayer excitons via the moirépotential.The confinement effect of the moirépotential on the moiréintralayer excitons was further demonstrated by the changing of temperature,laser power,and valley polarization.Our findings provide a new avenue for exploring new correlated quantum phenomena and their applications. | Biao Wu Haihong Zheng Shaofei Li Junnan Ding Jun He Yujia Zeng Keqiu Chen Zongwen Liu Shula Chen Anlian Pan Yanping Liu | 2022 | Light(Science & Applications)2022，11，7： | 0 |
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