|
|
|
题名
|
作者
|
年代
|
出处
|
被引量
|
| 1 | Numerical simulation and analysis of the underwater implosion of spherical hollow ceramic pressure hulls in 11000 m depth显示文摘Pressure hulls play an important role in deep-sea underwater vehicles.However,in the ultra-high pressure environment,a highly destructive phenomenon could occur to them which is called implosion.To study the characteristics of the flow field of the underwater implosion of hollow ceramic pressure hulls,the compressible multiphase flow theory,direct numerical simulation,and adaptive mesh refinement are used to numerically simulate the underwater implosion of a single ceramic pressure hull and multiple linearly arranged ceramic pressure hulls.Firstly,the feasibility of the numerical simulation method is verified.Then,the results of the flow field of the underwater implosion of hollow ceramic pressure hulls in 11000 m depth is analyzed.There are the compression-rebound processes of the internal air cavity in the implosion.In the rebound stage,a shock wave that is several times the ambient pressure is generated outside the pressure hull,and the propagation speed is close to the speed of sound.The pressure peak of the shock wave has a negative exponential power function relationship with the distance to the center of the sphere.Finally,it is found that the obvious superimposed effect between spheres exists in the chain-reaction implosion which enhances the implosion shock wave. | Shengxia Sun Fenghua Chen Min Zhao | 2023 | Journal of Ocean Engineering and Science2023，8，2： | 0 |
| 2 | 3-18 Investigations of Latent Track and Vibrational Spectra of Muscovite Mica Irradiated by Swift Heavy Ions显示文摘Muscovite mica sheets with a thickness of 12 m were irradiated by swift heavy ions Kr and Bi from Heavy IonResearch Facility in Lanzhou(HIRFL). The uences range from 11010 to 11012 ions/cm2. The electronic energyloss (dE/dx)e increases from 5.9 to 31.5 keV/nm. The vibrational modi cations in irradiated mica were investigatedby Fourier-transform infrared spectroscopy and the latent tracks were observed by transmission electron microscope(TEM). The infrared spectrum shows that motions from all atom types in the muscovite mica structure could befound in modes for all vibrations. As shown in Fig. 1, the intensity of all vibrational modes in mica, including theOH stretch motion at 3621 cm??1, decreased with the increasing (dE/dx)e. The similar tendency is found in samplesirradiated by swift heavy ions with increasing ion uence. It is indicated that defects and structural modi cationsgenerated during swift heavy ion irradiation, and more defects are introduced by irradiation with higher ion uence. | Zhang Shengxia Liu Jie Zeng Jian Mo Dan Yao Huijun Duan Jinglai Sun Youmei Hou Mingdong | 2014 | IMP & HIRFL Annual Report2014，，1： | 0 |
| 3 | 离子径迹对二位材料和器件的影响研究显示文摘The radiation effects in device induced by energetic heavy ions can lead to degradation or failure and have become a major threat to safe operation of spacecraft.Two-dimensional functional materials have unique structures and physical properties.They are expected to be the main materials of a new generation electronic devices.However,when the thicknesses of the materials are reduced to nanometers,its performance influenced by lattice defects will become more serious.Therefore,it is critical to study defects formation and its influences on the properties of two-dimensional functional materials. | Liu Jie Zhang Shengxia Hu Peipei Yin Yanan Liu Tianqi Luo Jie Zhai Pengfei Zeng Jian Duan Jinglai Yao Huijun Sun Youmei | 2018 | IMP & HIRFL Annual Report2018，，1： | 0 |
| 4 | 快重离子辐照氧化镓的非晶潜径迹研究显示文摘Gallium oxide(Ga_(2)O_(3)),an ultra-wide bandgap semiconductor material,is attracting great interest for power devices,solar cells and ultraviolet detectors.The study of radiation damage effects is of importance for the application of Ga_(2)O_(3) in harsh environment.In this work,it is the first time to observe the amorphous latent track of Ga2O3 single crystal by TEM.TEM images display that the mean diameters of amorphous latent tracks are 7.4,7.5 and 8.7 nm in Ga_(2)O_(3) lamella samples irradiated by Ta ions with energy of 1786,1388 and 829 MeV,respectively.The latent track size meaured by TEM in this work is consisent with that measured by XRD in previous study[1]. | Ai Wensi Xu Lijun Nan Shuai Zhai Pengfei Li Zongzhen Hu Peipei Zeng Jian Zhang Shengxia Liu li Sun Youmei Liu Jie | 2018 | IMP & HIRFL Annual Report2018，，1： | 0 |
| 5 | Vibrational Modes in La_(2)Zr_(2)O_(7) Pyrochlore Irradiated with Disparate Electrical Energy Losses显示文摘Polycrystalline samples of La_(2)Zr_(2)O_(7) pyrochlore were irradiated by different energetic heavy ions to investigate the dependence of the vibrational mode variations on the irradiation parameters. | Zhang Shengxia Liu Jie Zeng Jian Hu Peipei Xu Lijun Li Zongzheng Liu Li Zhai Pengfei Ai Wensi Sun Youmei | 2019 | IMP & HIRFL Annual Report2019，，1： | 0 |
| 6 | Accurate Determination of Water Permeabilities of Sub-anochannels.显示文摘Water permeability of membranes has been the focus of fundamental researches and technical applications.However,water permeability in sub-100 nm regime is not yet well understood as evidenced by the previously published data which are divergent from theory. | Xu Fangfang Liu Zhiwei Huang Ran Zhang Jiaming Liu Jie Hu Zhenguo Ma Jie Yao Huijun Sun Youmei Chen Yonghui Zhang Shengxia Mo Dan Duan Jinglai | 2019 | IMP & HIRFL Annual Report2019，，1： | 0 |
| 7 | 快重离子辐照引起AlGaN/GaN HEMTs器件性能退化显示文摘AlGaN/GaN HEMT devices were fabricated by means of metal-organic chemical vapor deposition(MOCVD)technique.The AlGaN/GaN HEMT devices were irradiated by 209Bi and 129Xe ions with initial kinetic energy of 9.5 and 19.5 MeV/u to different fluences,respectively.The devices were in off-sate without bias during the irradiation process.The electrical parameters of pristine and irradiated AlGaN/GaN HEMT devices were measured by semiconductor parameter analyzer(4200A-SCS)and then across section transmission electron microscope(TEM,FEI Tecnai G2 TF-20,200 kV)was used to investigate the structural distortion of the devices.The cross sectional slices of the devices selected for TEM measurement were prepared by focusing ion beam system(FIB,FEI Helio 600). | Hu Peipei Liu Jie Zhang Shengxia Zhai Pengfei Zeng Jian Xu Lijun Duan Jinglai Sun Youmei Li Zongzhen | 2017 | IMP & HIRFL Annual Report2017，，1： | 0 |
| 8 | 4-16 Raman Investigation of Phonon Deformation in InP and GaN Induced by Swift Heavy Ions and Highly Charged Ions显示文摘InP and GaN crystals were irradiated by swift heavy ions(SHI,56Fe and 209Bi)with kinetic energies of 6.3 and 9.5 MeV/u and highly charged ions(HCI,1.4 MeV 86Kr^12+and 114Xe^20+).The irradiation effects induced by different types of irradiation were studied by Raman spectroscopy.Two new irradiation-induced vibrations observed at 294 and 338 cm^-1 as shown in Fig.1 are assigned to InP-like TO and LO first-order optical modes[1],respectively,and in Fig. | Hu Peipei Liu Jie Zhang Shengxia Zhai Pengfei Zeng Jian Duan Jinglai Sun Youmei Li Zongzhen | 2016 | IMP & HIRFL Annual Report2016，，1： | 0 |
| 9 | 4-20 STM Study of HOPG Irradiated by Highly Charged Ions显示文摘Highly oriented pyrolytic graphite(HOPG)was irradiated by highly charged ions(84Kr^19+,84Kr^20+)at large fluence range(1.2×10^11 to 3.1×10^16 ions/cm^2).The variation of the HOPG surface with the increasing fluence was investigated by STM.The STM images of HOPG sample irradiated by Kr19+ions with different fluence are shown in Fig.1(a)^(g),and a number of hillocks can be found on the irradiated HOPG samples. | Zeng Jian Yao Huijun Zhai Pengfei Zhang Shengxia Hu Peipei Duan Jinglai Mo Dan Hou Mingdong Sun Youmei Liu Jie | 2016 | IMP & HIRFL Annual Report2016，，1： | 0 |
| 10 | 3-11 Damage Evolution and Track Formation in InP and GaN During Swift Heavy Ion Irradiation显示文摘InP crystals and GaN films were irradiated by 86Kr and 209Bi ions of initial kinetic energy 25 and 9.5 MeV/u, respectively. The ion fluence ranging from 51010 to 3.61012 ions/cm2 was applied. The thicknesses of the InP and the GaN films were 500 and 30 m, respectively. After irradiation, Raman spectra were measured using 532 nm laser as an excitation source in backscattering geometry. | Hu Peipei Liu Jie Zhang Shengxia Zeng Jian Guo Hang Zhai Pengfei Duan Jinglai Sun Youmei Hou Mingdong | 2015 | IMP & HIRFL Annual Report2015，，1： | 0 |
| 11 | 3-14 Evidence for Re-crystallization Process in the Irradiated Graphite with Heavy Ions Obtained by Raman Spectroscopy显示文摘As one of the most used non-destructive, high-resolution techniques for the study of the structure of carbon materials, Raman spectroscopy is able to provide valuable information about defects, stacking of the graphene layers, the size of crystallites in- and out-of-plane of graphite and edge states. Since Tuinstra and Koenig revealed the relationship between the intensity ratio of D to G mode and the size of the graphite micro-crystals, most groups paid main attention to the first-order Raman spectroscopy of irradiated graphite ranging from 1 000 to 2 000 cm?1. | Zhai Pengfei Liu Jie Zeng Jian Duan Jinglai Xu Lijun Yao Huijun Guo Hang Zhang Shengxia Hou Mingdong Sun Youmei | 2015 | IMP & HIRFL Annual Report2015，，1： | 0 |
| 12 | 3-15 Irradiation Effects of HOPG and Graphene Induced by Swift Heavy Ions and Highly Charged Ions显示文摘Monolayer graphene exfoliated on SiO2/Si substrate and bulk HOPG were irradiated by swift heavy ions (SHIs,479 MeV 86Kr and 112Sn) and highly charged ions (HCIs, 4 MeV 86Kr19+). The different irradiation effects caused by these two kinds of different ions were investigated by Raman spectrometer. The similarities and differences between HCIs and SHIs impacted graphene and HOPG are presented. | Zeng Jian Liu Jie Yao Huijun Zhai Pengfei Zhang Shengxia Guo Hang Hu Peipei Duan Jinglai Mo Dan Hou Mingdong Sun Youmei | 2015 | IMP & HIRFL Annual Report2015，，1： | 0 |
| 13 | 3-25 Swift-heavy Ion Irradiation-induced Decrease in Thermal Conductivity of MoS2显示文摘MoS2 is layered semiconductor with indirect band-gap of 1.2 eV[1]. Monolayer MoS2 is one layer of Mo atoms sandwiched between two layers of S atoms. The thickness of monolayer MoS2 is 0.65 nm. Monolayer MoS2 has direct band-gap (1.8 eV). Because of the unique electrical, optical, and mechanical properties, monolayer MoS2 has promising application prospects in nanoelectronic and optolelectronic devices. Considering the radiation environment which these devices work in, it is necessary to estimate the radiation resistance ability of MoS2. | Guo Hang Sun Youmei Liu Jie Zhai Pengfei Zeng Jian Zhang Shengxia Hu Peipei Duan Jinglai Yao Huijun Mo Dan Hou Mingdong | 2015 | IMP & HIRFL Annual Report2015，，1： | 0 |
您所在的机构暂未开通此部分的功能，请联系管理员