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		题名	作者	年代	出处	被引量
	1	Simulation model for electron irradiated IGZO thin film transistors显示文摘An efficient drain current simulation model for the electron irradiation effect on the electrical parameters of amorphous In–Ga–Zn–O(IGZO) thin-film transistors is developed. The model is developed based on the specifications such as gate capacitance, channel length, channel width, flat band voltage etc. Electrical parameters of un-irradiated IGZO samples were simulated and compared with the experimental parameters and 1 kGy electron irradiated parameters. The effect of electron irradiation on the IGZO sample was analysed by developing a mathematical model.	G K Dayananda C Shantharama Rai A Jayarama Hyun Jae Kim	2018	Journal of Semiconductors2018，39，2：	2
	2	Current-controlled negative differential resistance in four-terminal heterostructure devices et al 显示文摘	KASTALSKY A MILSHTEIN M SHANTHARAMA	1989	Applied Physics Letters1989，54，24：	1

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