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| 1 | Revealing the surface electronic structures of AIGaN deep-ultraviolet multiple quantum wells with lateral polarity domains显示文摘We report on the carrier dynamic and electronic structure investigations on AlGaN-based deep-ultraviolet multiple quantum wells (MQWs)with lateral polarity domains.The localized potential maximum is predicted near the domain boundaries by first-principle calculation,suggesting carrier localization and efficient radiative recombination.More importantly,lateral band diagrams of the MQWs are proposed based on electron affinities and valance band levels calculated from ultraviolet(UV)photoelectron spectroscopy.The proposed lateral band diagram is further demonstrated by surface potential distribution collected by Kelvin probe microscopy and the density-of-state calculation of energy bands.This work illustrates that lateral polarity structures are playing essential roles in the electronic properties of II nitride photonic devices and may provide novel perspective in the realization of high-efficiency UV emitters. | WEI GUO LI CHEN HOUQIANG XU YINGDA QIAN MOHEB SHEIKHI JASON HOO SHIPING GUO LIANG XU JIANZHE LU FERAS ALQATARI XIAOHANG LI KAIYAN HE ZHE CHUAN FENG JICHUN YE | 2020 | Photonics Research2020，8，6： | 2 |
| 2 | Direct demonstration of carrier distribution and recombination within step-bunched UV-LEDs显示文摘AlGaN-based solid state UV emitters have many advantages over conventional UV sources. However, UV-LEDs still suffer from numerous challenges, including low quantum efficiency compared to their blue LED counterparts. One of the inherent reasons is a lack of carrier localization effect inside fully miscible AlGaN alloys. In the pursuit of phase separation and carrier localization inside the active region of AlGaN UV-LED, utilization of highly misoriented substrates proves to be useful, yet the carrier distribution and recombination mechanism in such structures has seldom been reported. In this paper, a UV-LED with step-bunched surface morphology was designed and fabricated, and the internal mechanism of high internal quantum efficiency was studied in detail. The correlation between microscale current distribution and surface morphology was provided, directly demonstrating that current prefers to flow through the step edges of the epitaxial layers. Experimental results were further supported by numerical simulation. It was found that efficient radiative recombination centers were formed in the inclined quantum well regions. A schematic three-dimensional energy band structure of the multiple quantum wells(MQWs) across the step was proposed and helps in further understanding the luminescence behavior of LEDs grown on misoriented substrates. Finally, a general principle to achieve carrier localization was proposed, which is valid for most ternary Ⅲ-Ⅴ semiconductors exhibiting phase separation. | HOUQIANG XU JIEAN JIANG LI CHEN JASON HOO LONG YAN SHIPING GUO CAI SHEN YANPING WEI HUA SHAO ZI-HUI ZHANG WEI GUO JICHUN YE | 2021 | Photonics Research2021，9，5： | 2 |
| 3 | Ipilimumab monotherapy in patients with pretreated advanced melanoma: a randomised, double-blind, multicentre, phase 2, dose-ranging study显示文摘 | Jedd D Wolchok Bart Neyns Gerald Linette Sylvie Negrier Jose Lutzky Luc Thomas William Waterfield Dirk Schadendorf Michael Smylie Troy Guthrie Jean-Jacques Grob Jason Chesney Kevin Chin Kun Chen Axel Hoos Steven J O’Day Celeste Lebbé | 2010 | Lancet Oncology2010，，2： | 1 |
| 4 | Multi-step in situ interface modification method for emission enhancement in semipolar deep-ultraviolet light emitting diodes显示文摘SemipolarⅢ-nitrides have attracted increasing attention in applications of optoelectronic devices due to the much reduced polarization field.A high-quality semipolar AlN template is the building block of semipolar AlGaN-based deep-ultraviolet light emitting diodes(DUV LEDs),and thus deserves special attention.In this work,a multi-step in situ interface modification technique is developed for the first time,to our knowledge,to achieve high-quality semipolar AlN templates.The stacking faults were efficiently blocked due to the modification of atomic configurations at the related interfaces.Coherently regrown AlGaN layers were obtained on the in situ treated AlN template,and stacking faults were eliminated in the post-grown AlGaN layers.The strains between AlGaN layers were relaxed through a dislocation glide in the basal plane and misfit dislocations at the heterointerfaces.In contrast,high-temperature ex situ annealing shows great improvement in defect annihilation,yet suffers from severe lattice distortion with strong compressive strain in the AlN template,which is unfavorable to the post-grown AlGaN layers.The strong enhancement of luminous intensity is achieved in in situ treated AlGaN DUV LEDs.The in situ interface modification technique proposed in this work is proven to be an efficient method for the preparation of high-quality semipolar Al N,showing great potential towards the realization of high-efficiency optoelectronic devices. | LI CHEN JIE SUN WEI GUO JASON HOO WEI LIN HANGYANG CHEN HOUQIANG XU LONG YAN SHIPING GUO JUNYONG KANG JICHUN YE | 2022 | Photonics Research2022，10，12： | 0 |
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