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您的检索式：作者名="Haorui Luo"
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| 1 | On large-signal modeling of GaN HEMTs: past, development and future显示文摘In the past few decades,circuits based on gallium nitride high elec-tron mobility transistor(GaN HEMT)have demonstrated exceptional potential in a wide range of high-power and high-frequency applica-tions,such as the new generation mobile communications,object de-tection and consumer electronics,etc.As a critical intermediary be-tween GaN HEMT devices and circuit-level applications,GaN HEMT large-signal models play a pivotal role in the design,application and development of GaN HEMT devices and circuits.This review pro-vides an in-depth examination of the advancements in GaN HEMT large-signal modeling in recent decades.Detailed and comprehensive coverage of various aspects of GaN HEMT large-signal model was of-fered,including large-signal measurement setups,classical formula-tion methods,model classification and non-ideal effects,etc.In order to better serve follow-up researches,this review also explored poten-tial future directions for the development of GaN HEMT large-signal modeling. | Haorui Luo Wenrui Hu Yongxin Guo | 2023 | Chip2023，2，3： | 0 |
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