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| 1 | An overview of resistive random access memory devices显示文摘With recent progress in material science, resistive random access memory (RRAM) devices have attracted interest for nonvolatile, low-power, nondestructive readout, and high-density memories. Relevant performance parameters of RRAM devices include operating voltage, operation speed, resistance ratio, endurance, retention time, device yield, and multilevel storage. Numerous resistive-switching mechanisms, such as conductive filament, space-charge-limited conduction, trap charging and discharging, Schottky Emission, and Pool-Frenkel emission, have been proposed to explain the resistive switching of RRAM devices. In addition to a discussion of these mechanisms, the effects of electrode materials, doped oxide materials, and different configuration devices on the resistive-switching characteristics in nonvolatile memory applications, are reviewed. Finally, suggestions for future research, as well as the challenges awaiting RRAM devices, are given. | LI YingTao LONG ShiBing LIU Qi LU HangBing LIU Su LIU Ming | 2011 | Chinese Science Bulletin2011，56，28： | 9 |
| 2 | Improving the electrical performance of resistive switching memory using doping technology显示文摘In this paper, improvements of resistive random access memory (RRAM) using doping technology are summarized and analyzed. Based on a Cu/ZrO2/Pt device, three doping technologies with Ti ions, Cu, and Cu nanocrystal, respectively, are adopted in the experiments. Compared to an undoped device, improvements focus on four points: eliminating the electroforming process, reducing operation voltage, improving electrical uniformity, and increasing device yield. In addition, thermal stability of the high resistance state and better retention are also achieved by the doping technology. We demonstrate that doping technology is an effective way of improving the electrical performance of RRAM. | WANG Yan LIU Oi LU HangBing LONG ShiBing WANG Wei LI YingTao ZHANG Sen LIAN WenTai YANG JianHong LIU Ming | 2012 | Chinese Science Bulletin2012，57，11： | 6 |
| 3 | Approaches for improving the performance of filament-type resistive switching memory显示文摘Resistive random access memory (RRAM) has received significant research interest because of its promising potential in terms of down-scaling,high density,high speed and low power. However,its endurance,retention and uniformity are still imperfect. In this article,the physical mechanisms of filament-type RRAM and the approaches for improving the switching performance,including doping,process optimization and interface engineering,are introduced. | LIAN WenTai LONG ShiBing LU HangBing LIU Qi LI YingTao ZHANG Sen WANG Yan HUO ZongLiang DAI YueHua CHEN JunNing LIU Ming | 2011 | Chinese Science Bulletin2011，56，4： | 2 |
| 4 | Canine endothelial progenitor cell-lined hybrid vascular graft with nonthrombogenic potential显示文摘 | Hangbing M Toshihiko S Hisataka Y | 2003 | Journa of thoracic and cardiovascular surgery2003，126，2： | 1 |
| 5 | Controllable growth of nanoseale conductive filaments in solid-electro- lyte-based ReRAM by using a metal nanocrystal covered bottom electrode显示文摘 | Liu Qi Long Shibing Lv Hangbing | 2010 | American Chemical Society2010，4，10： | 1 |
| 6 | Investigation of LRS dependence on the retention of HRS in CBRAM显示文摘 | Xiaoxin Xu Hangbing Lv Hongtao Liu Qing Luo Tiancheng Gong Ming Wang Guoming Wang Meiyun Zhang Yang Li Qi Liu Shibing Long Ming Liu | 2015 | Nanoscale Research Letters2015，，： | 1 |
| 7 | An overview of the switching parameter variation of RRAM显示文摘Resistive random access memory(RRAM) has been considered as one of the most promising candidates for next-generation nonvolatile memory, due to its advantages of simple device structure, excellent scalability, fast operation speed and low power consumption. Deeply understanding the physical mechanism and effectively controlling the statistical variation of switching parameters are the basis of fostering RRAM into commercial application. In this paper, based on the deep understanding on the mechanism of the formation and rupture of conductive filament, we summarize the methods of analyzing and modeling the statistics of switching parameters such as SET/RESET voltage, current, speed or time. Then, we analyze the distributions of switching parameters and the influencing factors. Additionally, we also sum up the analytical model of resistive switching statistics composed of the cell-based percolation model and SET/RESET switching dynamics. The results of the model can successfully explain the experimental distributions of switching parameters of the Ni O- and Hf O2-based RRAM devices. The model also provides theoretical guide on how to improve the uniformity and reliability such as disturb immunity. Finally, some experimental approaches to improve the uniformity of switching parameters are discussed. | Meiyun Zhang Shibing Long Guoming Wang Yang Li Xiaoxin Xu Hongtao Liu Ruoyu Liu Ming Wang Congfei Li Pengxiao Sun Haitao Sun Qi Liu Hangbing L Ming Liu | 2014 | Chinese Science Bulletin2014，59，36： | 1 |
| 8 | Effects of different nitrogen fertilization on flue-cured tobacco production[J]显示文摘 | ZHOUYK(周余宽) HANGB(韩国彪) | | 山西农业科学0，，： | 1 |
| 9 | Highly uniform and nonlinear selection device based on trapezoidal band structure for high density nano- crossbar memory array显示文摘闩数组为完成二终端的功能的设备的高密度的集成提供一条划算的途径。然而,溜的当前的问题,能导致读的失败,是在闩数组的严重挑战。从 unselected 房间禁止溜的水流,单个选择设备的集成是必要的。在这个工作,我们报导展出在氧化物调节缺点的集中形成的 trapezoidal 乐队结构的一个新奇的道 x -based 选购者。突出的特征象高当前的密度那样(1 麻省穩 ? 楤瑳楲畢楴湯 ? 湩楳敤琠敨瘠物獵戭獡摥丠獐漠 ? 楳業湡瘠物獵? | Qing Luo Xiaoxin Xu Hangbing Lv Tiancheng Gong Shibing Long Qi Liu Ling Li Ming Liu | 2017 | Nano Research2017，10，10： | 1 |
| 10 | Progress in rectifying-based RRAM passive crossbar array显示文摘Resistive random access memory(RRAM) with crossbar structure is receiving widespread attentions due to its simple structure,high density,and feasibility of three-dimensional(3D) stack.It is an extremely promising solution for high density storage.However,a major issue of crosstalk restricts its development and application.In this paper,we will first introduce the integration methods of RRAM device and the existing crosstalk phenomenon in passive crossbar array,and then focus on the 1D1R(one diode and one resistor) structure and self-rectifying 1R(one resistor) structure which can restrain crosstalk and avoid misreading for the passive crossbar array.The test methods of crossbar array are also presented to evaluate the performances of passive crossbar array to achieve its commercial application in comparison with the active array consisting of one transistor and one RRAM cell(1T1R) structure.Finally,the future research direction of rectifying-based RRAM passive crossbar array is discussed. | ZHANG KangWei LONG ShiBing LIU Qi LUE HangBing LI YingTao WANG Yan LIAN WenTai WANG Ming ZHANG Sen LIU Ming | 2011 | Science China(Technological Sciences)2011，54，4： | 1 |
| 11 | Low-cost dual-stage offset-cancelled sense amplifier with hybrid read reference generator for improved read performance of RRAM at advanced technology nodes显示文摘In this work,two process-variation-tolerant schemes for a current-mode sense amplifier(CSA)of RRAM were proposed:(1)hybrid read reference generator(HRRG)that tracks process-voltage-temperature(PVT)variations and solve the nonlinear issue of the RRAM cells;(2)a two-stage offset-cancelled current sense amplifier(TSOCC-SA)with only two capacitors achieves a double sensing margin and a high tolerance of device mismatch.The simulation results in 28 nm CMOS technology show that the HRRG can provide a read reference that tracks PVT variations and solves the nonlinear issue of the RRAM cells.The proposed TSOCC-SA can tolerate over 64% device mismatch. | Qiao Wang Donglin Zhang Yulin Zhao Chao Liu Xiaoxin Xu Jianguo Yang Hangbing Lv | 2021 | Journal of Semiconductors2021，42，8： | 0 |
| 12 | Frequency dependence on polarization switching measurement in ferroelectric capacitors显示文摘Ferroelectric hysteresis loop measurement under high driving frequency generally faces great challenges.Parasitic factors in testing circuits such as leakage current and RC delay could result in abnormal hysteresis loops with erroneous rem-nant polarization(P_(r))and coercive field(E_(c)).In this study,positive-up-negative-down(PUND)measurement under a wide fre-quency range was performed on a 10-nm thick Hf_(0.5)Zr_(0.5)O_(2) ferroelectric film.Detailed analysis on the leakage current and RC delay was conducted as the polarization switching occurs in the FE capacitor.After considering the time lag caused by RC delay,reasonable calibration of current response over the voltage pulse stimulus was employed in the integral of polarization current over time.In such a method,rational P-V loops measured at high frequencies(>1 MHz)was successfully achieved.This work provides a comprehensive understanding on the effect of parasitic factors on the polarization switching behavior of FE films. | Zhaomeng Gao Shuxian Lyu Hangbing Lyu | 2022 | Journal of Semiconductors2022，43，1： | 0 |
| 13 | Evolution of pore structure in organic shale with typeⅢkerogen and high kaolinite content in Ningwu Basin显示文摘Special deposition environment makes organic-rich shales in Ningwu Basin have typeⅢkerogen and high kaolinite content,which are also famous as the kaolinite ore.The specific composition of shale in Ningwu Basin can change the pore structure and thus,influence the shale gas storage and transport.This study focuses on the pore structure and its evolution in shales with typeⅢkerogen and high kaolinite content.In this study,14 Upper Paleozoic shale samples,whose total organic matter contents(TOC)range from 0.39%to 5.91%and maturities(represented by vitrinite reflectance)range from 1.22%to 2.06%,were collected.Scanning electron microscopy(SEM),high-pressure mercury injection,and low-tempera-ture N2 adsorption experiments were used to analyze pore structure of these shale samples.Results show that when the TOC content is smaller than 1.4%,the kaolinite content decreases linearly and quartz content increases linearly with increasing the TOC content.In contrast,when TOC content is>1.4%,the clay content tends to increase with increasing TOC.Based on the SEM images,organic pores and clay pores were identified in shale samples with typeⅢkerogen and high kaolinite content.During the maturation process,the kaolinite content decreases and illite content increases with increasing the vitrinite reflectance.At the same time,the pore volume and pore surface area both increase with increasing the vitrinite reflectance,and it may be because more organic pores and clay pores in the illite were generated during the maturation process.This study can provide further understandings of shale gas accumulation in shale with typeⅢkerogen and high kaolinite content. | Qiang XU Hangbing LIN Yue ZHAO Bo WANG Bin MA Rong DEVG Jianxin WANG Tao HOU | 2021 | Frontiers of Earth Science2021，15，4： | 0 |
| 14 | Modulating 3D memristor synapse by analog spiking pulses for bioinspired neuromorphic computing显示文摘Memristor based artificial synapses have demonstrated great potential for bioinspired neuromorphic computing in recent years.To emulate synaptic functions, such as short-term plasticity and long-term potentiation/depression, square pulses or combined complex pulse groups are applied on the device. However, in biological neuron systems, the action potentials are analog pulses with similar amplitudes. Furthermore, in biological systems, the intensity of the stimulus is coded into the frequency of action potentials to modulate the weight of synapses. Toward this programming method, we applied a series of analog spiking pulses with same peaks on Ru/TiO_x/TiN 3D memristor to emulate synaptic functions, such as long-term potentiation/depression and synaptic saturation. Moreover, we demonstrated the conductance change of the device under different stimulus frequencies of analog spiking pulses and described the statistical results of conductance change value, which shows that the device conductance has a larger change value under a higher spiking frequency with identical pulse number. These results show that the analog spiking pulses can well modulate the memristor-based synaptic weight and have a great potential for bioinspired computing in the future. | Qi Liu XuMeng Zhang Qing LUO XiaoLong Zhao HangBing Lv ShiBing Long Ming Liu | 2018 | Science China(Physics,Mechanics & Astronomy)2018，61，8： | 0 |
| 15 | A Hf_(0.5)Zr_(0.5)O_(2)ferroelectric capacitor-based half-destructive read scheme for computing-in-memory显示文摘The emerging non-volatile memories(NVMs),including resistive random access memory(RRAM)[1],phase-change memory(PCM)[2],and ferroelectric random access memory(Fe RAM)[3],have broad application prospects owing to their non-volatility and near-zero static energy consumption.Compared to other NVMs,ferroelectric capacitors(Fe CAPs)ofer advantages in energy consumption and endurance.However,the destructive read operation of capacitors(e.g.,DRAMs and Fe CAPs)destroys the stored data. | Yulin ZHAO Yuan WANG Donglin ZHANG Zhongze HAN Qiao HU Xuanzhi LIU Qingting DING Jinhui CHENG Wenjun ZHANG Yue CAO Ruixi ZHOU Qing LUO Jianguo YANG Hangbing LV | 2023 | Science China(Information Sciences)2023，66，5： | 0 |
| 16 | Photoacoustic microscopy based on transparent piezoelectric ultrasound transducers显示文摘Photoacoustic microscopy(PAM),due to its deep penetration depth and high contrast,is playing an increasingly important role in biomedical imaging.PAM imaging systems equipped with conventional ultrasound transducers have demonstrated excellent imaging performance.However,these opaque ultrasonic transducers bring some constraints to the further development and application of PAM,such as complex optical path,bulky size,and difficult to integrate with other modalities.To overcome these problems,ultrasonic transducers with high optical transparency have appeared.At present,transparent ultrasonic transducers are divided into optical-based and acoustic-based sensors.In this paper,we mainly describe the acoustic-based piezoelectric transparent transducers in detail,of which the research advances in PAM applications are reviewed.In addition,the potential challenges and developments of transparent transducers in PAM are also demonstrated. | Hangbing Peng Zhongwen Cheng Lvming Zeng Xuanrong Ji | 2023 | Journal of Innovative Optical Health Sciences2023，16，5： | 0 |
| 17 | Investigation of weight updating modes on oxide-based resistive switching memory synapse towards neuromorphic computing applications显示文摘Dear editor,Memristors, resistive random access memory(RRAM) devices when used in memory applications, have attracted significant interest recently as a promising candidate for neuromorphic computing systems due to their excellent size scalability, fast switching speed and low energy consumption [1].In order to obtain high learning accuracy in neural networks based on back propagation learning rule, the updating behavior of synaptic linear symmetric weights is important [2]. | Qingting DING Tiancheng GONG Jie YU Xiaoxin XU Xiaoyan LI Hangbing LV Jianguo YANG Qing LUO Peng YUAN Feng ZHANG Ming LIU | 2021 | Science China(Information Sciences)2021，64，11： | 0 |
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