| 1 | Modeling of tunneling current density of GeC based double barrier multiple quantum well resonant tunneling diode显示文摘The double barrier quantum well(DBQW) resonant tunneling diode(RTD) structure made of SiGeSn/GeC/SiGeSn alloys grown on Ge substrate is analyzed. The tensile strained Ge_(1-z)C_z on Si_(1-x-y)Ge_xSn_y heterostructure provides a direct band gap type I configuration. The transmission coefficient and tunneling current density have been calculated considering single and multiple quantum wells. A comparative study of tunnelling current of the proposed structure is done with the existing RTD structure based on GeSn/SiGeSn DBH. A higher value of the current density for the proposed structure has been obtained. | Swagata Dey Vedatrayee Chakraborty Bratati Mukhopadhyay Gopa Sen | 2018 | Journal of Semiconductors2018，39，10： | 1 |
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