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| 1 | Agricultural land loss in China's urbanization process显示文摘In China, urbanization of agricultural land around city agglomerations increases rapidly. Rapid urbaniza-tion of agricultural land affects food supply, land value and ecological balance in the society. In China, the urban built-up area had increased by 40% from 1996 to 2003. This increase came predominantly from farmland surrounding thecities. How the ongoing urbanization of China affects its agricultural land is the focus of this paper. In current studies, wehave found that population density; urbanization degree and personal income are key factors that influence the urbaniza-tion process. Based on this, relation model has been established and to predict the general trends of the urban areaexpansion in China in 2020. In 2020, the constructed urban area of China would be increased by 1.3 times compared with2003. In 2020, this study anticipates the conversion of about 32,562 sq. km. agricultural land of China for urban use. | Li Xiaoyun Cai Yinyin Zhu Daolin Zhang Anlu | 2006 | Ecological Economy2006，2，1： | 3 |
| 2 | A Phase Change Memory Chip Based on Ti Sb Te Alloy in 40-nm Standard CMOS Technology显示文摘In this letter, a phase change random access memory(PCRAM) chip based on Ti0.4Sb2Te3 alloy material was fabricated in a 40-nm 4-metal level complementary metal-oxide semiconductor(CMOS) technology. The phase change resistor was then integrated after CMOS logic fabrication. The PCRAM was successfully embedded without changing any logic device and process, in which 1.1 V negative-channel metal-oxide semiconductor device was used as the memory cell selector. The currents and the time of SET and RESET operations were found to be 0.2 and 0.5 m A, 100 and 10 ns,respectively. The high speed performance of this chip may highlight the design advantages in many embedded applications. | Zhitang Song Yi Peng Zhan Daolin Cai Bo Liu Yifeng Chen Jiadong Ren | 2015 | Nano-Micro Letters2015，7，2： | 2 |
| 3 | Improving the data retention of phase change memory by using a doping element in selected Ge_2Sb_2Te_5显示文摘The crystallization characteristics of a ubiquitous T-shaped phase change memory(PCM) cell, under SET current pulse and very small disturb current pulse, have been investigated by finite element modelling. As analyzed in this paper, the crystallization region under SET current pulse presents first on the corner of the bottom electron contact(BEC) and then promptly forms a filament shunting down the amorphous phase to achieve the low-resistance state, whereas the tiny disturb current pulse accelerates crystallization at the axis of symmetry in the phase change material. According to the different crystallization paths, a new structure of phase change material layer is proposed to improve the data retention for PCM without impeding SET operation.This structure only requires one or two additional process steps to dope nitrogen element in the center region of phase change material layer to increase the crystallization temperature in this confined region. The electrical-thermal characteristics of PCM cells with incremental doped radius have been analyzed and the best performance is presented when the doped radius is equal to the radius of the BEC. | Yaoyao Lu Daolin Cai Yifeng Chen Shuai Yan Lei Wu Yuanguang Liu Yang Li Zhitang Song | 2019 | Journal of Semiconductors2019，40，4： | 0 |
| 4 | Facile modification of aluminum hypophosphate and its flame retardancy for polystyrene显示文摘A phosphorus-containing flame retardant, aluminum hypophosphite(AHPi), has been modified by(3-aminopropyl) triethoxysilane(KH550) to prepare flame-retardant polystyrene(PS). The influence of modified AHPi on the morphology and characterization was investigated, and differences in flame retardant properties of the PS/AHPi and PS/modified AHPi were compared. The PS composite can pass the vertical burning tests(UL-94 standard) with a V-0 rating when the mass content of modified AHPi reaches20%, compared with the mass content of 25% AHPi. The element mapping of the PS composite shows that modified AHPi has better dispersion in PS than AHPi. Thermogravimetric analysis results indicated that adding modified AHPi can advance the initial decomposition temperature of the composite material.With the addition of modified AHPi, the decrease in peak heat release rate(p HRR) is more evident than AHPi, and the char yield of the resultant PS composites gradually increased. With the addition of 25%modified AHPi, the p HRR and total heat release of PS composites decreased by 81.4% and 37.6%. The modification of AHPi promoted its dispersion in the PS matrix and improved the char formation of PS composites. The results of real-time infrared spectrometry of PS composites, Fourier transform infrared spectra and X-ray photoelectron analysis of the char layer indicated that modified AHPi has flame retardancy in condensed and gas phases. | Wensheng Li Liangyuan Qi Daolin Ye Wei Cai Weiyi Xing | 2023 | Chinese Journal of Chemical Engineering2023，60，8： | 0 |
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