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7篇 您的检索式:作者名="Chang Yuchi"
    题名 作者 年代 出处 被引量
1A Kinectbased upper limb rehabilitation system to assist people with cerebral palsy 显示文摘Chang Yaojen Han Wenying Tsai Yuchi 2013Research in Developmental Disabilities2013,34,11:1
2Characteristics of gaseous HNO2,HNO3,NH3 and particulate ammoniuln nitrate in an urban city of Central Taiwan显示文摘Lin Yuchi Chang Manting Ting Weiyu 2006Atmospheric Environment2006,40,:1
3显示文摘Chang Yuchi Fan Kuangcheng Lin Chun I 2002Journal of the Chinese Institute of Chemical Engineers2002,33,5:1
4A novel compact dual-band bandpass filter using asymmetric SIRs for WLANS显示文摘CHANG YUCHI KAO CHIAHSIUNG WENG MINHANG YANG RUYUAN 2008-IEEE Microwave and Wireless Components Letters2008,50,5:1
5显示文摘Chang Yunmin Hsieh Yuchi Wu Puwei 2008Materials Letters2008,62,:1
6Process aspects of the electrolytic codeposition of molybdenum disulfide with Nickel 显示文摘Chang Yuchi Chang Yingyin 2001Electrochimica Acta2001,43,3:1
7One-Dimensional(NH=CINH_(3))_(3)PbI_(5)Perovskite for Ultralow Power Consumption Resistive Memory显示文摘Organic-inorganic hybrid perovskites(OIHPs)have proven to be promising active layers for nonvolatile memories because of their rich abundance in earth,mobile ions,and adjustable dimensions.However,there is a lack of investigation on controllable fabrication and storage properties of one-dimensional(1D)OIHPs.Here,the growth of 1D(NH=CINH_(3))_(3)PbI_(5)((IFA)_(3)PbI_(5))perovskite and related resistive memory properties are reported.The solution-processed 1D(IFA)_(3)PbI_(5)crystals are of welldefined monoclinic crystal phase and needle-like shape with the length of about 6 mm.They exhibit a wide bandgap of 3 eV and a high decomposition temperature of 206℃.Moreover,the(IFA)_(3)PbI_(5)films with good uniformity and crystallization were obtained using a dual solvent of N,N-dimethylformamide(DMF)and dimethyl sulfoxide(DMSO).To study the intrinsic electric properties of this anisotropic material,we constructed the simplest memory cell composed of only Au/(IFA)_(3)PbI_(5)/ITO,contributing to a high-compacted device with a crossbar array device configuration.The resistive random access memory(ReRAM)devices exhibit bipolar current-voltage(I-V)hysteresis characteristics,showing a record-low power consumption of~0.2 mW among all OIHP-based memristors.Moreover,our devices own the lowest power consumption and“set”voltage(0.2 V)among the simplest perovskite-based memory devices(inorganic ones are also included),which are no need to require double metal electrodes or any additional insulating layer.They also demonstrate repeatable resistance switching behaviour and excellent retention time.We envision that 1D OIHPs can enrich the low-dimensional hybrid perovskite library and bring new functions to low-power information devices in the fields of memory and other electronics applications.Xuefen Song Hao Yin Qing Chang Yuchi Qian Chongguang Lyu Huihua Min Xinrong Zong Chao Liu Yinyu Fang Zhengchun Cheng Tianshi Qin Wei Huang Lin Wang 2021Research2021,,1:0
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