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		题名	作者	年代	出处	被引量
	1	Influence of interface point defect on the dielectric properties of Y doped CaCu_(3)Ti_(4)O_(12) ceramics显示文摘CaCu_(3)Ti_(4-x)Y_(x)O_(12)(0≤x≤0.12)ceramics were fabricated with conventional solid-state reaction method.Phase structure and microstructure of prepared ceramics were characterized by X-ray diffraction(XRD)and scanning electron microscopy(SEM),respectively.The impedance and modulus tests both suggested the existence of two different relaxation behavior,which were attributed to bulk and grain boundary response.In addition,the conductivity and dielectric permittivity showed a step-like behavior under 405 K.Meanwhile,frequency independence of dc conduction became dominant when above 405 K.In CCTO ceramic,rare earth element Y^(3+)ions as an acceptor were used to substitute Ti sites,decreasing the concentration of oxygen vacancy around grainelectrode and grain boundary.The reason to the reduction of dielectric behavior in low frequencies range was associated with the Y doping in CCTO ceramic.	Jianming Deng Xiaojun Sun Saisai Liu Laijun Liu Tianxiang Yan Liang Fang Brahim Elouadi	2016	Journal of Advanced Dielectrics2016，6，1：	0
	2	Preparation and Characterization of Orthophosphates for Optics and Electronics显示文摘	Nami Nakamori Shinnosuke Kamei Yuta Noma Gen Saitou Takeshi Toyama Brahim Elouadi	2016	Journal of Physical Science and Application2016，6，1：	0

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